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MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
PM25CLB120
FEATURE
a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.9V @Tj=125C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. * 3 25A, 1200V Current-sense IGBT type inverter * Monolithic gate drive & protection logic * Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) * Acoustic noise-less 3.7kW class inverter application * UL Recognized Yellow Card No.E80276(N) File No.E80271
APPLICATION General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
120 7 19.75 3.25 16 3-2 106 0.25 66.5
Dimensions in mm
17 16 3-2 16 3-2 15.25 2-5.5 6-2 MOUNTING HOLES 1.5 16 3
44
25.75
35
55
1
5
9
13
19
44
B
U
V
W
25
44 2.5 19.5 22 7.75 23
44
44
44
42 .
1
2-2.5
1.5
1
N P
9.5
5
23 98.25
23
Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 NC UN VN WN Fo
19-s0.5
11.5 27.5
9.5
May 2005
MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC Fo
1.5k
VNC WN
VN1
VN
UN
WP VWP1 VWPC WFO
VP VVPC
VVP1 VFO
UP VUPC
VUP1 UFO
1.5k
1.5k
1.5k
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd In
Fo Vcc
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
Gnd
Si Out
OT
NC
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCES IC ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25C TC = 25C TC = 25C Ratings 1200 25 50 150 -20 ~ +150 Unit V A A W C
(Note-1)
CONTROL PART
Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC WP-VWPC, UN * VN * WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO, FO terminals Ratings 20 20 20 20 Unit V V V mA
May 2005
MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
TOTAL SYSTEM
Parameter Supply Voltage Protected by VCC(PROT) SC VCC(surge) Supply Voltage (Surge) Storage Temperature Tstg Isolation Voltage Viso Symbol Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = +125C Start Applied between : P-N, Surge value 60Hz, Sinusoidal, Charged part to Base, AC 1 min. Ratings 800 1000 -40 ~ +125 2500 Unit V V C Vrms
THERMAL RESISTANCES
Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Condition Inverter IGBT (per 1 element) Inverter FWDi (per 1 element) Case to fin, (per 1 module) Thermal grease applied (Note-1) (Note-1) (Note-1) Min. -- -- -- Limits Typ. -- -- -- Max. 0.83* 1.36* 0.038 Unit
C/W
* If you use this value, Rth(f-a) should be measured just under the chips. (Note-1) TC (under the chip) measurement point is below. arm axis X Y UP IGBT FWDi 29.0 29.3 -7.1 1.5 VP IGBT FWDi 65.0 65.5 -7.1 2.0 WP IGBT FWDi 85.6 85.9 -7.1 2.0 UN IGBT FWDi 37.8 37.5 5.1 -4.5 VN IGBT FWDi 55.2 55.7 5.1 -4.5 (Unit : mm) WN IGBT FWDi 75.8 75.3 5.1 -4.5
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise noted) INVERTER PART
Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 25A VCIN = 0V (Fig. 1) -IC = 25A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V15V VCC = 600V, IC = 25A Tj = 125C Inductive Load VCE = VCES, VCIN = 15V (Fig. 5) Tj = 25C Tj = 125C (Fig. 2) Min. -- -- -- 0.5 -- -- -- -- -- -- Limits Typ. 1.8 1.9 2.5 1.0 0.5 0.4 2.0 0.7 -- -- Max. 2.3 2.4 3.5 2.5 0.8 1.0 3.0 1.2 1 10 Unit V V
Switching Time
s
(Fig. 3,4) Tj = 25C Tj = 125C
Collector-Emitter Cutoff Current
mA
May 2005
MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
CONTROL PART
Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width VD = 15V, VCIN = 15V Condition VN1-VNC V*P1-V*PC Min. -- -- 1.2 1.7 50 -- 135 -- 11.5 -- -- -- 1.0 Limits Typ. 15 5 1.5 2.0 -- 0.2 145 125 12.0 12.5 -- 10 1.8 Max. 25 10 1.8 2.3 -- -- -- -- 12.5 -- 0.01 15 -- Unit mA V A s C V mA ms
Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC (Fig. 3,6) -20 Tj 125C, VD = 15V VD = 15V VD = 15V Detect Tj of IGBT chip -20 Tj 125C VD = 15V, VFO = 15V VD = 15V (Fig. 3,6) Trip level Reset level Trip level Reset level (Note-2) (Note-2)
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol -- -- Parameter Mounting torque Weight Mounting part -- Condition screw : M5 Min. 2.5 -- Limits Typ. 3.0 340 Max. 3.5 -- Unit N*m g
RECOMMENDED CONDITIONS FOR USE
Symbol VCC VD VCIN(ON) VCIN(OFF) fPWM tdead Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage PWM Input Frequency Arm Shoot-through Blocking Time Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN * VN * WN-VNC Using Application Circuit of Fig. 8 For IPM's each input signals (Fig. 7) Recommended value 800 15.0 1.5 0.8 9.0 20 2.5 Unit V V V kHz s
(Note-3) With ripple satisfying the following conditions: dv/dt swing 5V/s, Variation 2V peak to peak
May 2005
MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
PRECAUTIONS FOR TESTING 1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. After this, the specified ON and OFF level setting for each input signal should be done. 2. When performing "SC" tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device. (These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
IN Fo IN Fo
P, (U,V,W)
VCIN
(0V)
V
Ic
VCIN
(15V)
V
-Ic
VD (all)
U,V,W, (N)
VD (all)
U,V,W, (N)
Fig. 1 VCE(sat) Test
Fig. 2 VEC Test
a) Lower Arm Switching
P
VCIN (15V) VCIN
Signal input (Upper Arm) Signal input (Lower Arm)
Fo
Fo
U,V,W
trr Irr
CS
VCE Ic 90%
Vcc 90%
N
b) Upper Arm Switching
VCIN Signal input (Upper Arm) Signal input (Lower Arm)
VD (all)
P
Ic
10%
10% tc (on)
10% tc (off)
10%
Fo
U,V,W
VCIN
CS
Vcc
td (on)
tr
td (off)
tf
VCIN (15V)
Fo
(ton= td (on) + tr)
N
(toff= td (off) + tf)
VD (all)
Ic
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN Short Circuit Current
P, (U,V,W) A
IN Fo
Constant Current SC
Pulse VCE
VCIN (15V)
Ic
VD (all)
U,V,W, (N)
Fo toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM' input signal VCIN (Upper Arm)
0V
IPM' input signal VCIN (Lower Arm)
1.5V
2V
1.5V
t
0V
2V
1.5V
2V
t
tdead
tdead
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2005
MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
P
20k 10
VUP1 UFo UP VUPC
1.5k
Vcc Fo In
OT OUT Si U
VD
IF
+ -
GND GND Vcc Fo In GND GND Vcc Fo OT OUT Si W OT OUT Si OT OUT Si V
0.1
VVP1 VFo
1.5k
VD
VP VVPC VWP1 WFo
1.5k
M
VD
20k
WP VWPC
In GND GND Vcc Fo
IF
10
UN
0.1
In GND GND N OT
20k
IF
10
Vcc VN Fo In
OUT Si
0.1 20k
GND GND VN1
10
Vcc Fo In
OT OUT Si NC
VD
IF
WN
0.1
VNC
GND GND
NC 5V
1k
Fo
1.5k
: Interface which is the same as the U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tPLH, tPHL 0.8s, Use High CMR type. Slow switching opto-coupler: CTR > 100% Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line and improve noise immunity of the system.
* * * * * * *
May 2005
MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (INVERTER PART * TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. Ic) CHARACTERISTICS (INVERTER PART * TYPICAL) 2 VD = 15V
30 Tj = 25C
COLLECTOR CURRENT IC (A)
VD = 17V 13V 20
15V
1.5
1
10
0.5 Tj = 25C Tj = 125C 0 0 10 20 30
0
0
0.5
1
1.5
2
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE (VS. VD) CHARACTERISTICS (INVERTER PART * TYPICAL) 2
SWITCHING TIME tc(on), tc(off) (s)
SWITCHING TIME CHARACTERISTICS (TYPICAL) 101
7 VCC = 600V 5 VD = 15V Tj = 25C 4 Tj = 125C 3 2 Inductive load
1.5
tc(off) 100
7 5 4 3 2
1
0.5 IC = 25A Tj = 25C Tj = 125C 0 12 13 14 15 16 17 18
tc(on)
10-1 0 10
2
3 4 5 7 101
2
3 4 5 7 102
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR CURRENT IC (A)
101
SWITCHING TIME ton, toff (s)
7 5 4 3 2
SWITCHING LOSS ESW(on), ESW(off) (mJ/pulse)
SWITCHING TIME CHARACTERISTICS (TYPICAL)
SWITCHING LOSS CHARACTERISTICS (TYPICAL) 101
7 5 4 3 2
ESW(off) ESW(on) ESW(on) ESW(on) VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load
2 3 4 5 7 101 2 3 4 5 7 102
toff
ESW(off)
ESW(off)
100
7 5 4 3 2
100
7 5 4 3 2
ton VCC = 600V VD = 15V Tj = 25C Tj = 125C Inductive load
2 3 4 5 7 101 2 3 4 5 7 102
10-1 0 10
10-1 0 10
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
May 2005
MITSUBISHI
PM25CLB120
FLAT-BASE TYPE INSULATED PACKAGE
COLLECTOR RECOVERY CURRENT -IC (A)
DIODE FORWARD CHARACTERISTICS (INVERTER PART * TYPICAL)
7 5 4 3 2
REVERSE RECOVERY TIME trr (s)
102
VD = 15V
7 5 4 3 2
trr Irr Irr
7 5 4 3 2
101
7 5 4 3 2
10-1
7 5 4 3 2
101
7 5 4 3
Tj = 25C Tj = 125C 0 0.5 1 1.5 2 2.5
100
10-2 0 10
2
VCC = 600V VD = 15V Tj = 25C Tj = 125C 2 Inductive load 100 1 2 3 4 5 7 102 3 4 5 7 10
EMITTER-COLLECTOR VOLTAGE VEC (V)
COLLECTOR RECOVERY CURRENT -IC (A)
ID VS. fc CHARACTERISTICS (TYPICAL) 50 100
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART)
NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - c)
VD = 15V Tj = 25C 40
7 5 3 2
10-1
7 5 3 2
ID (mA)
30
20
N-side
10 P-side 0 0 5 10 15 20 25
10-2 Single Pulse 7 5 IGBT Part; Per unit base = Rth(j - c)Q = 0.83C/ W 3 FWDi Part; 2 Per unit base = Rth(j - c)F = 1.36C/ W 10-3 -5 10 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 TIME (s)
fc (kHz)
May 2005
REVERSE RECOVERY CURRENT lrr (A)
DIODE REVERSE RECOVERY CHARACTERISTICS (INVERTER PART * TYPICAL) 100 102

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